參數(shù)資料
型號(hào)： IS42S16128-8T
廠商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： Chassis Mount and Din Rail Filters RoHS Compliant: Yes
中文描述： 256K X 16 SYNCHRONOUS DRAM, 8 ns, PDSO50
封裝： 0.400 INCH, TSOP2-50
文件頁(yè)數(shù)： 5/75頁(yè)
文件大?。?/td> 638K
代理商： IS42S16128-8T
IS42S16128
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/13/00
5
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
0V
≤
V
IN
≤
V
CC
, with pins other than
the tested pin at 0V
Output is disabled
0V
≤
V
OUT
≤
V
CC
I
OUT
=
–
2 mA
I
OUT
= +2 mA
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
–
10
10
μA
I
OL
Output Leakage Current
–
10
10
μA
V
OH
V
OL
Output High Voltage Level
Output Low Voltage Level
2.4
—
—
0.4
V
V
I
CC
1
Operating Current
(1,2)
One Bank Operation, Burst Length=1
t
RC
≥
t
RC
(min.), I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
—
100
mA
I
CC
2P
I
CC
2PS
I
CC
2N
I
CC
2NS
I
CC
3P
I
CC
3PS
I
CC
3N
I
CC
3NS
I
CC
4
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
t
CK
=
×
t
CK
= t
CK
(
MIN
)
t
CK
=
×
t
CK
= t
CK
(
MIN
)
t
CK
=
×
t
CK
= t
CK
(
MIN
)
t
CK
=
×
CAS
latency = 3
—
—
—
—
—
—
—
—
-8
-10
-12
-8
-10
-12
-8
-10
-12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
2
30
15
3
2
30
15
160
160
120
120
120
110
100
100
80
2
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
CKE
≥
V
IH
(
MIN
)
CKE
≤
V
IL
(
MAX
)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
CAS
latency = 2
I
CC
5
Auto-Refresh Current
t
RC
= t
RC
(
MIN
)
I
CC
6
Self-Refresh Current
CKE
≤
0.2V
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time increases.
Also note that a bypass capacitor of at least 0.01 μF should be inserted between Vcc and GND for each memory chip to suppress
power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.
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參數(shù)描述
IS42S16160A-6T 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM
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IS42S16160A-7T 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S16160A-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S16160B 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256-MBIT SYNCHRONOUS DRAM
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