參數(shù)資料
型號: IS42G32256
廠商: Integrated Silicon Solution, Inc.
英文描述: 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
中文描述: 256K × 32 × 2(16兆)同步圖形RAM
文件頁數(shù): 40/52頁
文件大?。?/td> 456K
代理商: IS42G32256
IS42G32256
40
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION
SR037-0C
09/10/98
ISSI
Figure 24. Page Read Cycle at Different Bank at Burst Length = 4
Notes:
1.
CS
can be “Don’t Care” when
RAS
,
CAS
, and
WE
are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
CLK
CKE
CS
RAS
CAS
A0-A8
WE
DSF
DQM
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
RAa
CAa
CAc
RBb
CBb
CAe
CBd
RAa
A10
A9
RBb
HIGH
HIGH
ROW ACTIVE
(A-BANK)
ROW
ACTIVE
(B-BANK)
READ
(A-BANK)
READ
(A-BANK)
READ
(B-BANK)
READ
(B-BANK)
READ
(A-BANK)
PRECHARGE
(A-BANK)
: DON’T CARE
DQ: CLOCK
LATENCY = 2
DQ: CLOCK
LATENCY = 3
NOTE 2
QBd0 QBd1 QAe0 QAe1
QBb2 QBb3
QBb0 QBb1
QAa2 QAa3
QAa0 QAa1
QAc0
QAc1
QBd0 QBd1 QAe0 QAe1
QBb2 QBb3
QBb0 QBb1
QAa2 QAa3
QAa0 QAa1
QAc0
QAc1
相關PDF資料
PDF描述
IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-5T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-5TL 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-6T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-6TL 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
IS42G32256-10PQ 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
IS42G32256-7PQ 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
IS42G32256-8PQ 制造商:Integrated Silicon Solution Inc 功能描述:
IS42K 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC NPN NC
IS42KS 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC NPN NC