參數(shù)資料
型號(hào): IS41LV44004-50JI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 4M X 4 EDO DRAM, 50 ns, PDSO24
封裝: 0.300 INCH, SOJ-24
文件頁(yè)數(shù): 12/19頁(yè)
文件大小: 157K
代理商: IS41LV44004-50JI
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/24/01
IS41C4400X
IS41LV4400X SERIES
ISSI
FUNCTIONAL BLOCK DIAGRAM
OE
WE
CAS
WE
OE
DATA I/O BUS
COLUMN DECODERS
SENSE AMPLIFIERS
MEMORY ARRAY
4,194,304 x 4
ROW
DECODER
DATA
I/O
BUFFERS
CAS
CONTROL
LOGIC
WE
CONTROL
LOGICS
OE
CONTROL
LOGIC
I/O0-I/O3
RAS
A0-A10(A11)
RAS
CLOCK
GENERATOR
REFRESH
COUNTER
ADDRESS
BUFFERS
TRUTH TABLE
Function
RAS
CAS
WE
OE
Address tR/tC
I/O
Standby
H
X
High-Z
Read
L
H
L
ROW/COL
DOUT
Write: Word (Early Write)
L
X
ROW/COL
DIN
Read-Write
L
H
→LL→H
ROW/COL
DOUT, DIN
EDO Page-Mode Read
1st Cycle:
L
H
→L
H
L
ROW/COL
DOUT
2nd Cycle:
L
H
→L
H
L
NA/COL
DOUT
EDO Page-Mode Write
1st Cycle:
L
H
→L
L
X
ROW/COL
DIN
2nd Cycle:
L
H
→L
L
X
NA/COL
DIN
EDO Page-Mode
1st Cycle:
L
H
→LH→LL→H
ROW/COL
DOUT, DIN
Read-Write
2nd Cycle:
L
H
→LH→LL→H
NA/COL
DOUT, DIN
Hidden Refresh
Read
L
→H→L
L
H
L
ROW/COL
DOUT
Write(1)
L
→H→L
L
X
ROW/COL
DOUT
RAS-Only Refresh
L
H
X
ROW/NA
High-Z
CBR Refresh
H
→L
L
X
High-Z
Note:
1. EARLY WRITE only.
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