參數(shù)資料
型號(hào): IS41LV16105
廠商: Integrated Silicon Solution, Inc.
英文描述: 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁(yè)模式動(dòng)態(tài)RAM)
中文描述: 100萬× 16的DRAM與快速頁(yè)面模式(3.3伏,1Mx16帶快速頁(yè)模式動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 6/18頁(yè)
文件大小: 140K
代理商: IS41LV16105
6
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. A
03/03/00
IS41C16105
IS41LV16105
ISSI
ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
Any input 0V
V
IN
Vcc
Other inputs not under test = 0V
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
5
5
μA
I
IO
Output Leakage Current
Output is disabled (Hi-Z)
0V
V
OUT
Vcc
I
OH
=
5.0 mA (5V)
I
OH
=
2.0 mA (3.3V)
5
5
μA
V
OH
Output High Voltage Level
2.4
V
V
OL
Output Low Voltage Level
I
OL
= 4.2 mA (5V)
I
OL
= 2.0 mA (3.3V)
RAS
,
LCAS
,
UCAS
V
IH
0.4
V
I
CC
1
Standby Current: TTL
Commerical
5V
3.3V
5V
3.3V
3
3
4
4
mA
Extended/Idustrial
mA
I
CC
2
Standby Current: CMOS
RAS
,
LCAS
,
UCAS
V
CC
0.2V
5V
3.3V
2
2
mA
I
CC
3
Operating Current:
Random Read/Write
(2,3,4)
Average Power Supply Current
RAS
,
LCAS
,
UCAS
,
Address Cycling, t
RC
= t
RC
(min.)
-50
-60
160
145
mA
I
CC
4
Operating Current:
Fast Page Mode
(2,3,4)
Average Power Supply Current
RAS
= V
IL
,
LCAS
,
UCAS
,
Cycling t
PC
= t
PC
(min.)
-50
-60
90
80
mA
I
CC
5
Refresh Current:
RAS
-Only
(2,3)
Average Power Supply Current
RAS
Cycling,
LCAS
,
UCAS
V
IH
t
RC
= t
RC
(min.)
-50
-60
160
145
mA
I
CC
6
Refresh Current:
CBR
(2,3,5)
Average Power Supply Current
RAS
,
LCAS
,
UCAS
Cycling
t
RC
= t
RC
(min.)
-50
-60
160
145
mA
Notes:
1. An initial pause of 200 μs is required after power-up followed by eight
RAS
refresh cycles (
RAS
-Only or CBR) before proper device
operation is assured. The eight
RAS
cycles wake-up should be repeated any time the t
REF
refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each Fast page cycle.
5. Enables on-chip refresh and address counters.
相關(guān)PDF資料
PDF描述
IS41LV16256-35K 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-35T 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-60K 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-60KI 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-60T 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41LV16105-50K 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16105-50KI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16105-50T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16105-50TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16105-60K 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE