參數(shù)資料
型號: IS41LV16105
廠商: Integrated Silicon Solution, Inc.
英文描述: 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁模式動態(tài)RAM)
中文描述: 100萬× 16的DRAM與快速頁面模式(3.3伏,1Mx16帶快速頁模式動態(tài)內(nèi)存)
文件頁數(shù): 5/18頁
文件大?。?/td> 140K
代理商: IS41LV16105
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. A
03/03/00
5
IS41C16105
IS41LV16105
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
1.0 to +7.0
0.5 to +4.6
V
3.3V
V
CC
Supply Voltage
5V
1.0 to +7.0
0.5 to +4.6
V
3.3V
I
OUT
Output Current
50
mA
P
D
Power Dissipation
1
W
T
A
Commercial Operation Temperature
Extended Temperature
Industrail Temperature
0 to +70
30 to +85
40 to +85
°
C
°
C
°
C
T
STG
Storage Temperature
55 to +125
°
C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
5.0
3.3
5.5
3.6
V
3.3V
V
IH
Input High Voltage
5V
2.4
2.0
V
CC
+ 1.0
V
CC
+ 0.3
V
3.3V
V
IL
Input Low Voltage
5V
1.0
0.3
0.8
0.8
V
3.3V
T
A
Commercial Ambient Temperature
Extended Ambient Temperature
Industrail Ambient Temperature
0
70
85
85
°
C
°
C
°
C
30
40
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
Input Capacitance: A0-A9
5
pF
C
IN
2
Input Capacitance:
RAS
,
UCAS
,
LCAS
,
WE
,
OE
7
pF
C
IO
Data Input/Output Capacitance: I/O0-I/O15
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz,
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