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| 型號： | IS41LV16100 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 DRAM With EDO Page Mode(3.3V,1Mx16帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)RAM) |
| 中文描述： | 100萬× 16的DRAM與江戶頁面模式（3.3伏，1Mx16帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)內(nèi)存） |
| 文件頁數(shù)： | 7/20頁 |
| 文件大?。?/td> | 172K |
| 代理商： | IS41LV16100 |
IS41C16100
IS41LV16100
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. F
03/08/00
7
ISSI
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
RC
t
RAC
t
CAC
t
AA
t
RAS
t
RP
t
CAS
t
CP
t
CSH
t
RCD
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(26)
CAS
Precharge Time
(9, 25)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time
(20)
Column-Address Hold Time
(20)
Column-Address Hold Time
(referenced to
RAS
)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
to
CAS
Precharge Time
RAS
Hold Time
(27)
RAS
Hold Time from
CAS
Precharge
CAS
to Output in Low-Z
(15, 29)
CAS
to
RAS
Precharge Time
(21)
Output Disable Time
(19, 28, 29)
Output Enable Time
(15, 16)
Output Enable Data Delay (Write)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
OE
LOW to
CAS
HIGH Setup Time
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS
)
(12)
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
Write Command Hold Time
(17, 27)
Write Command Hold Time
(referenced to
RAS
)
(17)
84
—
—
—
50
30
8
9
38
12
0
8
0
8
30
—
50
13
25
10K
—
10K
—
—
37
—
—
—
—
—
104
—
—
—
60
40
10
9
40
14
0
10
0
10
40
—
60
15
30
10K
—
10K
—
—
45
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RAD
t
RAL
t
RPC
t
RSH
t
RHCP
t
CLZ
t
CRP
t
OD
t
OE
t
OED
t
OEHC
t
OEP
t
OES
t
RCS
t
RRH
10
25
5
8
37
0
5
3
—
20
5
10
5
0
0
25
—
—
—
—
—
—
15
13
—
—
—
—
—
—
12
30
5
10
37
0
5
3
—
20
5
10
5
0
0
30
—
—
—
—
—
—
15
15
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RCH
0
—
0
—
ns
t
WCH
t
WCR
8
40
—
—
10
50
—
—
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16105 | 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁模式動(dòng)態(tài)RAM) |
| IS41LV16256-35K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-35T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16100/S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 16 (16-Mbit) Dynamic RAM with EDO Page Mode |
| IS41LV16100-50K | 制造商:Integrated Silicon Solution Inc 功能描述:Dynamic RAM, EDO, 1M x 16, 42 Pin, Plastic, SOJ |
| IS41LV16100-50KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100-50T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100-50TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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