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| 型號(hào)： | IS41LV16100 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 DRAM With EDO Page Mode(3.3V,1Mx16帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM) |
| 中文描述： | 100萬(wàn)× 16的DRAM與江戶(hù)頁(yè)面模式（3.3伏，1Mx16帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 6/20頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | IS41LV16100 |
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IS41C16100
IS41LV16100
6
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. F
03/08/00
ISSI
ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
Any input 0V
≤
V
IN
≤
Vcc
Other inputs not under test = 0V
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
–5
5
μA
I
IO
Output Leakage Current
Output is disabled (Hi-Z)
0V
≤
V
OUT
≤
Vcc
–5
5
μA
V
OH
Output High Voltage Level
I
OH
= –5.0 mA (5V)
I
OH
= –2.0 mA (3.3V)
2.4
—
V
V
OL
Output Low Voltage Level
I
OL
= 4.2 mA (5V)
I
OL
= 2.0 mA (3.3V)
—
0.4
V
I
CC
1
Standby Current: TTL
RAS
,
LCAS
,
UCAS
≥
V
IH
Commerical
5V
3.3V
5V
3.3V
—
—
—
—
3
3
4
4
mA
Extended/Industrial
mA
I
CC
2
Standby Current: CMOS
RAS
,
LCAS
,
UCAS
≥
V
CC
– 0.2V
5V
3.3V
—
—
2
2
mA
I
CC
3
Operating Current:
Random Read/Write
(2,3,4)
Average Power Supply Current
RAS
,
LCAS
,
UCAS
,
Address Cycling, t
RC
= t
RC
(min.)
-50
-60
—
—
160
145
mA
I
CC
4
Operating Current:
EDO Page Mode
(2,3,4)
Average Power Supply Current
RAS
= V
IL
,
LCAS
,
UCAS
,
Cycling t
PC
= t
PC
(min.)
-50
-60
—
—
90
80
mA
I
CC
5
Refresh Current:
RAS
-Only
(2,3)
Average Power Supply Current
RAS
Cycling,
LCAS
,
UCAS
≥
V
IH
t
RC
= t
RC
(min.)
-50
-60
—
—
160
145
mA
I
CC
6
Refresh Current:
CBR
(2,3,5)
Average Power Supply Current
RAS
,
LCAS
,
UCAS
Cycling
t
RC
= t
RC
(min.)
-50
-60
—
—
160
145
mA
Notes:
1. An initial pause of 200 μs is required after power-up followed by eight
RAS
refresh cycles (
RAS
-Only or CBR) before proper device
operation is assured. The eight
RAS
cycles wake-up should be repeated any time the t
REF
refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
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PDF描述 |
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| IS41LV16105 | 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁(yè)模式動(dòng)態(tài)RAM) |
| IS41LV16256-35K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-35T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16100/S | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:1M x 16 (16-Mbit) Dynamic RAM with EDO Page Mode |
| IS41LV16100-50K | 制造商:Integrated Silicon Solution Inc 功能描述:Dynamic RAM, EDO, 1M x 16, 42 Pin, Plastic, SOJ |
| IS41LV16100-50KI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100-50T | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100-50TI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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