參數(shù)資料
型號(hào): IRSF3011
廠商: International Rectifier
英文描述: FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=200mohm)
中文描述: 充分保護(hù)功率MOSFET開(kāi)關(guān)(譏\u003d 50V的的Rds(on)\u003d 200mohm)
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 536K
代理商: IRSF3011
IRSF3011
2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (T
c
= 25°C unless
otherwise specified.)
Minimum Maximum
-0.3
-55
self-limited
-55
Units
Test Conditions
Vds, max
Vin, max
Ids
Pd
EAS
Vesd1
Vesd2
T
Jop
T
Stg
T
L
Continuous Drain to Source Voltage
Continuous Input Voltage
Continuous Drain Current
Power Dissipation
Unclamped Single Pulse Inductive Energy
Electrostatic Discharge Voltage (Human Body Model)
Electrostatic Discharge Voltage (Machine Model)
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 10 seconds)
50
10
V
self limited
30
200
4000
1000
W
mJ
Tc
25°C
V
1000pF. 1.5k
200pF, 0
175
300
°C
Minimum Typical Maximum Units
50
54
56
155
200
115
10
1.5
2.0
0.25
0.35
0.5
0.6
10
10.8
1.2
Test Conditions
I
ds
= 10mA
I
ds
= 6A, t
p
= 700 μS
V
in
= 5V, I
ds
= 2A
V
in
= 4V, I
ds
= 2A
V
in
= 10V, I
ds
= 2A
V
ds
= 12V, V
in
= 0V
V
ds
= 50V, V
in
= 0V
V
ds
=40V,V
in
=0V,T
c
=150°C
V
ds
= 5V, I
ds
= 10mA
V
in
= 5V
V
in
= 10V
V
in
= 5V
V
in
= 10V
I
in
= 10mA
I
ds
= -9A, R
in
= 1k
V
ds,clamp
Drain to Source Clamp Voltage
62
200
10
100
250
2.5
0.6
0.85
1.0
1.2
1.5
V
R
ds(on)
Drain to Source On Resistance
m
I
dss
Drain to Source Leakage Current
μA
V
th
I
i,on
Input Threshold Voltage
Input Supply Current (Normal Operation)
V
mA
I
i, off
Input Supply Current (Protection Mode)
V
in, clamp
V
sd
Input Clamp Voltage
Body-Drain Diode Forward Drop
V
Static Electrical Characteristics
(T
c
= 25°C unless otherwise specified.)
Minimum Typical Maximum Units
Test Conditions
R
Θ
jc
R
Θ
jA
R
Θ
jc
R
Θ
jA
Junction to Case
Junction to Ambient
Junction to PCB
Junction to PCB
4
°C/W
TO-220AB
62
40
60
°C/W
SOT-223
Thermal Characteristics
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