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參數(shù)資料
| 型號： | IRSF3011 |
| 廠商： | International Rectifier |
| 英文描述： | FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=200mohm) |
| 中文描述： | 充分保護(hù)功率MOSFET開關(guān)（譏\u003d 50V的的Rds（on）\u003d 200mohm） |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 536K |
| 代理商： | IRSF3011 |
IRSF3011
11
Figure A1. Block Diagram
Using higher input voltage will improve the turn-on time but
it will not affect the turn-off switching speed.
The typical waveforms at 7V input voltage are shown in
Figure A3. In typical switching applications (below 60kHz)
the difference in switching losses between the IRSF3011
and the same size standard MOSFET is negligible.
Figure A2. Waveforms switching clamped induc-
tive load using 5V input voltage
Over-Current Protection
When the drain current exceeds the preset limit, the protec-
tion circuit resets the internal flip-flop and turns Q1 off.
Normal operation can be restored by holding the input volt-
To Order
Application Information
Introduction
Protected monolithic POWER MOSFETs offer simple,
cost effective solutions in applications where extreme oper-
ating conditions can occur. The margin between the
operating conditions and the absolute maximum values can
be narrowed, resulting in better utilization of the device and
lower cost. ESD protection also reduces the off-circuit
failures during handling and assembly.
General Description
The IRSF3011 is a fully protected monolithic N-channel
logic level POWER MOSFET with 200m
(max) on-re-
sistance. The built-in protections include over-current,
over-temperature, ESD and over-voltage.
The over-current and over-temperature protections make
the IRSF3011 indestructible under any load conditions in
switching or in linear applications. The built-in ESD pro-
tection minimizes the risk of ESD damage when the device
is off-circuit. The IRSF3011 is fully characterized for ava-
lanche operation and can be used for fast de-energization of
inductive loads.
The TO-220 packaged IRSF3011 offers an easy upgrade
with direct pin-to-pin replacement from non-protected de-
vices.
Block Diagram
As illustrated in figure A1, a zener diode between the input
and the source provides the ESD protection for the input
and also limits the voltage applied to the input to 10V.
The R-S flip-flop memorizes the occurrence of an error
condition and controls the Q2 and Q3 switches. The flip-
flop can be cleared by holding the input low for the
specified minimum duration.
COMP1 and COMP2 comparators are used to compare the
over-current and over-temperature signals with the built-in
reference. Either comparator can reset the fault flip-flop
and turn Q1 off. During fault condition, Q2 disconnects
the gate of Q1 from the input, and Q3 shorts the gate and
source of Q1, resulting in rapid turn-off of Q1. The zener
diode between the gate and drain of Q1 turns Q1 on when
the drain to source voltage exceeds 55V.
Switching Characteristics
In the IRSF3011, the control logic and the protection cir-
cuits are powered from the input pin. When positive
voltage appears at the input pin, the R-S flip-flop turns Q2
on and connects the gate of the main device to the input.
The turn-on speed is limited by the channel resistance of Q2
and the gate charge requirements of Q1. The typical switch-
ing waveforms at 5V input voltage are shown in Figure A2.
Input voltage 5V/div.
Drain Current: 1A/div.
Drain voltage 5V/div.
Time: 1
μ
sV/div.
Next Data Sheet
Index
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRSF3011F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5A I(D) | TO-220VAR |
| IRSF3011L | 功能描述:IC DRIVER LO SIDE 50V 5A SOT-223 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| IRSF3011LTR | 功能描述:IC DRIVER LO SIDE 50V 5A SOT-223 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| IRSF3011S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5A I(D) | TO-252VAR |
| IRSF3012 | 功能描述:IC DRIVER LO SIDE 50V 7A TO220AB RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
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