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參數(shù)資料
| 型號： | IRSF3011 |
| 廠商： | International Rectifier |
| 英文描述： | FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=200mohm) |
| 中文描述： | 充分保護功率MOSFET開關（譏\u003d 50V的的Rds（on）\u003d 200mohm） |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 536K |
| 代理商： | IRSF3011 |
IRSF3011
12
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
12/96
Figure A4. Waveforms at over-current shut-down
Figure A3. Switching waveforms with 7V Input
voltage
age below the specified threshold level (approx. 1.3V) for
the specified minimum t
reset
time.
The typical waveforms at over-current shut-down are
shown in Figure A4. After turn-on, the current in the in-
ductor at the drain starts ramping up. At about 7A, the
over-current protection shuts down the device.
Over-Temperature Protection
Figure A5 illustrates the operation of the over-temperature
protection. The IRSF3011 switches a 2
resistive load to a
10V power supply. When the thermal balance is estab-
lished, the junction temperature is limited on a
pulse-by-pulse basis.
Over-Voltage Protection
When the drain-to-source voltage exceeds 55V, the zener
diode between gate and drain turns the IRSF3011 on be-
fore the breakdown voltage of the drain-source diode is
reached. This greatly enhances the energy the device can
safely withstand during inductive load turn-offs compared
Figure A5. Over-temperature shut-down
Input voltage 10V/div.
Drain voltage 5V/div.
Drain Current: 2A/div.
Time: 10
μ
sV/div.
to avalanche breakdown. Thus the device can be used for
fast de-energization of inductive loads. The absorbed en-
ergy is limited only by the maximum junction temperature.
Time: 10
μ
sV/div.
Drain Current: 2A/div.
Input voltage 5V/div.
Drain voltage 5V/div.
Input voltage 5V/div.
Drain voltage 5V/div.
Drain Current: 1A/div.
Time: 1
μ
sV/div.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRSF3011F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5A I(D) | TO-220VAR |
| IRSF3011L | 功能描述:IC DRIVER LO SIDE 50V 5A SOT-223 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 內部開關 系列:- 標準包裝:1,000 系列:- 類型:高端/低端驅動器 輸入類型:SPI 輸出數(shù):8 導通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| IRSF3011LTR | 功能描述:IC DRIVER LO SIDE 50V 5A SOT-223 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 內部開關 系列:- 標準包裝:1,000 系列:- 類型:高端/低端驅動器 輸入類型:SPI 輸出數(shù):8 導通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| IRSF3011S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5A I(D) | TO-252VAR |
| IRSF3012 | 功能描述:IC DRIVER LO SIDE 50V 7A TO220AB RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 內部開關 系列:- 標準包裝:1,000 系列:- 類型:高端/低端驅動器 輸入類型:SPI 輸出數(shù):8 導通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
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