參數(shù)資料
型號(hào)： IRLR7821PBF
廠商： International Rectifier
英文描述： Replacement for Texas Instruments part number SN74LS161AN. Buy from authorized manufacturer Rochester Electronics.
中文描述： ㈢的HEXFET功率MOSFET
文件頁數(shù)： 2/12頁
文件大?。?/td> 329K
代理商： IRLR7821PBF
2
www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
46
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
23
–––
7.5
10
9.5
12.5
–––
–––
-5.3
–––
–––
1.0
–––
150
–––
100
–––
-100
–––
–––
10
14
2.0
–––
1.2
–––
2.5
–––
4.3
–––
3.7
–––
8.5
–––
11
–––
4.2
–––
10
–––
3.2
–––
1030
–––
360
–––
120
–––
V
mV/°C
m
V
GS(th)
V
GS(th)
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
See Fig. 16
nC
ns
pF
Parameter
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Diode Characteristics
Parameter
I
S
Continuous Source Current
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min.
–––
Typ. Max. Units
–––
65
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
260
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
26
15
1.0
38
23
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
V
GS
= 4.5V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250μA
–––
V
GS
= 4.5V
I
D
= 12A
Typ.
–––
–––
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Clamped Inductive Load
V
DS
= 15V, I
D
= 12A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
Conditions
7.5
Max.
230
12
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 12A
V
DS
= 16V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLR7821TR 制造商:International Rectifier 功能描述:
IRLR7821TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 65A 3-Pin(2+Tab) DPAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 65A 3PIN DPAK - Tape and Reel
IRLR7821TRLHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 65A 3-Pin(2+Tab) DPAK T/R
IRLR7821TRLPBF 功能描述:MOSFET MOSFT 30V 65A 10mOhm 10nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLR7821TRPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 10mOhms 10nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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