參數(shù)資料
型號(hào)： IRLP3803
廠商： International Rectifier
英文描述： HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管)
中文描述： HEXFET功率MOSFET（馬鞍山的HEXFET功率場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 149K
代理商： IRLP3803
IRLP3803
Parameter
Min. Typ. Max. Units
30
–––
–––
0.052 –––
–––
––– 0.006
–––
––– 0.011
1.0
–––
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
230
–––
29
–––
35
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 71A
V
GS
= 4.5V, I
D
= 59A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 71A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 71A
V
DS
= 24V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 15V
I
D
= 71A
R
G
= 1.3
,
V
GS
= 4.5V
R
D
= 0.20
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
140
41
78
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
5000
1800
880
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nA
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
L
D
Internal Drain Inductance
–––
5.0
–––
L
S
Internal Source Inductance
–––
13
–––
ns
μA
nH
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
V
DD
= 15V, starting T
J
= 25°C, L = 180μH
R
G
= 25
, I
AS
= 71A. (See Figure 12)
I
SD
≤
71A, di/dt
≤
130A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 71A, V
GS
= 0V
T
J
= 25°C, I
F
= 71A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
120
450
1.3
180
680
V
ns
nC
Source-Drain Ratings and Characteristics
A
–––
–––
470
–––
––– 120
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
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