參數(shù)資料
型號(hào)： IRL3202S
英文描述： 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
中文描述： 20V的單個(gè)N -溝道HEXFET功率MOSFET的一項(xiàng)D2 - PAK封裝
文件頁數(shù)： 1/8頁
文件大?。?/td> 125K
代理商： IRL3202S
Parameter
Max.
48
30
190
69
0.56
± 10
14
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100μs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
270
29
6.9
5.0
mJ
A
mJ
V/ns
-55 to + 150
300 (1.6mm from case )
°C
11/18/97
IRL3202S
PRELIMINARY
HEXFET
Power MOSFET
PD 9.1675B
S
D
G
V
DSS
= 20V
R
DS(on)
= 0.016
W
I
D
= 48A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D
2
Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Description
D Pak
Parameter
Typ.
–––
–––
Max.
1.8
40
Units
R
q
JC
R
q
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
°C/W
Thermal Resistance
Absolute Maximum Ratings
l
Advanced Process Technology
l
Surface Mount
l
Optimized for 4.5V-7.0V Gate Drive
l
Ideal for CPU Core DC-DC Converters
l
Fast Switching
相關(guān)PDF資料
PDF描述
IRL3202S N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
IRL3303L TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-262AA
IRL3402S TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 85A I(D) | TO-263AA
IRL3402S N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
IRL3502S 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRL3202SPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRL3202STRR 功能描述:MOSFET N-CH 20V 48A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRL3215 功能描述:MOSFET N-CH 150V 12A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRL3215HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 12A 3-Pin(3+Tab) TO-220AB
IRL3215PBF 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 12A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:MOSFET N LOGIC TO-220 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, TO-220 制造商:International Rectifier 功能描述:MOSFET N-Channel 150V 12A TO220AB
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*