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參數(shù)資料
| 型號： | IRL3502S |
| 英文描述： | 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
| 中文描述： | 20V的單個N -溝道HEXFET功率MOSFET的一項D2 - PAK封裝 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | IRL3502S |
11/18/97
IRL3502S
PRELIMINARY
HEXFET
Power MOSFET
PD -9.1676A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D
2
Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
S
D
G
Parameter
Max.
110
67
420
140
1.1
± 10
14
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100μs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
390
64
14
5.0
mJ
A
mJ
V/ns
-55 to + 150
300 (1.6mm from case )
°C
V
DSS
= 20V
R
DS(on)
= 0.007
W
I
D
= 110A
Description
Parameter
Typ.
–––
–––
Max.
0.89
40
Units
R
q
JC
R
q
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
°C/W
Thermal Resistance
D Pak
l
Advanced Process Technology
l
Surface Mount
l
Optimized for 4.5V-7.0V Gate Drive
l
Ideal for CPU Core DC-DC Converters
l
Fast Switching
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRL3502S | HEXFET Power MOSFET,Ideal for CPU Core DC-DC Converters(HEXFET功率MOS場效應(yīng)管,理想用于CPU 核心 DC-DC 轉(zhuǎn)換器) |
| IRL3705 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-220AB |
| IRL3705NL | (186.82 k) |
| IRL3705NS | (186.82 k) |
| IRL3705S | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-252VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRL3502SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 110A 3-Pin(2+Tab) D2PAK |
| IRL3502SPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 8mOhms 73.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL3502STRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 110A 3-Pin(2+Tab) D2PAK T/R |
| IRL3502STRLPBF | 功能描述:MOSFET N-CH 20V 110A D2PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRL3502STRR | 功能描述:MOSFET N-CH 20V 110A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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