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參數(shù)資料
| 型號： | IRHM57064SCS |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 124K |
| 代理商： | IRHM57064SCS |
www.irf.com
3
Pre-Irradiation
IRHM57064
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
60
—
60
—
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
1.5
4.0
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
—
100
—
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
—
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
—
10
—
10
A
VDS= 48V, VGS =0V
RDS(on)
Static Drain-to-Source
—
0.0061
—
0.0071
VGS = 12V, ID =35A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source
—
0.012
—
0.013
VGS = 12V, ID =35A
On-State Resistance (TO-254)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHM57064, IRHM53064 and IRHM54064
2. Part number IRHM58064
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage
—
1.2
—
1.2
V
VGS = 0V, IS = 35A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
V
DS
(V)
MeV/(mg/cm2))
(MeV)
(m)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Kr
39.2
300
37.4
60
52
34
Xe
63.3
300
29.2
46
35
25
15
Au
86.6
2068
106
35
27
20
14
0
10
20
30
40
50
60
70
0
-5
-10
-15
-20
VGS
VDS
Kr
Xe
Au
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM57064SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM57160 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 35A 3PIN TO-254AA - Rail/Tube |
| IRHM57160SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM57160SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM57163SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
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