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參數(shù)資料
| 型號： | IRHM57064SCS |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 124K |
| 代理商： | IRHM57064SCS |
IRHM57064
Pre-Irradiation
2
www.irf.com
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
0.50
RthCS
Case-to-Sink
—
0.21
—
°C/W
RthJA
Junction-to-Ambient
—
48
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
35*
ISM
Pulse Source Current (Body Diode)
—
140
VSD
Diode Forward Voltage
—
1.2
V
Tj = 25°C, IS = 35A, VGS = 0V
trr
Reverse Recovery Time
—
200
ns
Tj = 25°C, IF = 35A, di/dt ≤100A/s
QRR Reverse Recovery Charge
—
818
nC
VDD ≤ 25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by internal wire diameter
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.063
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.012
VGS = 12V, ID = 35A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
42
—
S ( )VDS > 15V, IDS = 35A
IDSS
Zero Gate Voltage Drain Current
—
10
VDS= 48V ,VGS=0V
——
25
VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
160
VGS =12V, ID = 35A
Qgs
Gate-to-Source Charge
—
55
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
65
td(on)
Turn-On Delay Time
—
35
VDD = 30V, ID = 35A
tr
Rise Time
—
125
VGS =12V, RG = 2.35
td(off)
Turn-Off Delay Time
—
75
tf
Fall Time
—
50
LS + LD
Total Inductance
—
6.8
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
—
6300
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
2300
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
70
—
nA
nH
ns
A
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