
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
35*
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
35*
IDM
Pulsed Drain Current
140
PD @ TC = 25°C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
35
A
EAR
Repetitive Avalanche Energy
25
mJ
dv/dt
Peak Diode Recovery dv/dt
4.8
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead
Temperature
300 (0.063 in. (1.6 mm from case for10s )
Weight
9.3 (Typical )
g
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
oC
A
9/05/01
www.irf.com
1
60V, N-CHANNEL
* Current is limited by internal wire diameter
c
TECHNOLOGY
Product Summary
Part Number Radiation Level
RDS(on)
ID
IRHM57064
100K Rads (Si)
0.012
35A*
IRHM53064
300K Rads (Si)
0.012
35A*
IRHM54064
600K Rads (Si)
0.012
35A*
IRHM58064
1000K Rads (Si)
0.013
35A*
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
For footnotes refer to the last page
4
4#
TO-254AA
Pre-Irradiation
n Light Weight
RADIATION HARDENED
IRHM57064
POWER MOSFET
THRU-HOLE (TO-254AA)
PD - 93792B