參數資料
型號： IRH93250
廠商： International Rectifier
英文描述： P-Channel, -200 Volt, 0.315 Ω, RAD HARD HEXFET(P 溝道,-200 V,0.315 Ω,抗輻射 HEXFET晶體管)
中文描述： P溝道，-200伏，0.315Ω，RAD數據通信硬的HEXFET性（P溝道，-200五，0.315Ω，抗輻射的HEXFET晶體管）
文件頁數： 2/8頁
文件大小： 107K
代理商： IRH93250
IRH9250, IRH93250
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
-14
-56
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.6
775
7.2
V
ns
μ
C
T
j
= 25°C, IS = -14A, VGS = 0V
Tj = 25°C, IF = -14A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-200
—
Typ
—
-0.24
Max Units
—
—
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
4.0
—
—
—
—
—
—
—
—
0.315
0.33
-4.0
—
-25
-250
VGS = -12V, ID = -9A
VGS = -12V, ID = -14A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -9 A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS =-20 V
VGS = 20V
VGS =-12V, ID = -14A
VDS = Max Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
-100
100
200
45
85
60
240
225
220
—
nC
VDD = -100V, ID = -14A,
RG = 2.35
LS
Internal Source Inductance
—
13
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4200
690
160
—
—
—
VGS = 0V, VDS = -25 V
f = 1.0MHz
pF
nA
nH
ns
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
ing the internal inductances.
μ
A
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
RthCS
Junction-to-Sink
Min Typ Max
—
—
—
—
—
0.12
Units
Test Conditions
0.83
30
—
°C/W
Typical socket mount
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