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參數(shù)資料
| 型號： | IRHE4230 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝（持有LCC - 18） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 269K |
| 代理商： | IRHE4230 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
5.5
3.5
22
25
0.2
±20
240
—
—
5.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s)
0.42 (Typical)
g
PD - 90713E
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
02/01/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHE7230 100K Rads (Si)
IRHE3230 300K Rads (Si)
IRHE4230 600K Rads (Si)
IRHE8230 1000K Rads (Si)
I
D
QPL Part Number
JANSR2N7262U
JANSF2N7262U
JANSG2N7262U
JANSH2N7262U
0.35
0.35
0.35
0.35
5.5A
5.5A
5.5A
5.5A
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
For footnotes refer to the last page
IRHE7230
JANSR2N7262U
200V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD-Hard
HEXFET
MOSFET
TECHNOLOGY
LCC - 18
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| IRHF54034 | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
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| IRHF58034 | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| IRHF54230 | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHE53034 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHE53130 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHE53133SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHE53230SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHE53234SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
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