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參數(shù)資料
| 型號(hào)： | IRH93250 |
| 廠商： | International Rectifier |
| 英文描述： | P-Channel, -200 Volt, 0.315 Ω, RAD HARD HEXFET(P 溝道,-200 V,0.315 Ω,抗輻射 HEXFET晶體管) |
| 中文描述： | P溝道，-200伏，0.315Ω，RAD數(shù)據(jù)通信硬的HEXFET性（P溝道，-200五，0.315Ω，抗輻射的HEXFET晶體管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | IRH93250 |
Product Summary
Part Number
IRH9250
IRH93250 -200V 0.315
-14A
BV
DSS
-200V
R
DS(on)
0.315
I
D
-14A
Features:
n
Radiation Hardened up to 3 x 10
5
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
P-CHANNEL
RAD HARD
PD - 91392A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRH9250
IRH93250
Absolute Maximum Ratings
Parameter
Continuous Drain Current
IRH9250, IRH93250
-14
-9.0
-56
150
1.2
± 20
500
-14
15
-41
-55 to 150
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
Pre-Irradiation
o
C
A
1/6/99
www.irf.com
1
-200 Volt, 0.315
, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 3 X 10
5
Rads (Si). Under
identical
pre- and post-
radiation test conditions, International Rectifier’s P-Channel
RAD HARD HEXFETs retain
identical
electrical specifica-
tions up to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also ca-
pable of surviving transient ionization pulses as high as 1 x
10
12
Rads (Si)/Sec, and return to normal operation within a
few microseconds. Single Event Effect (SEE) testing of In-
ternational Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the P-
Channel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the high-
est quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power sup-
plies, motor controls, inverters, choppers, audio amplifiers
and high-energy pulse circuits in space and weapons
environments.
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