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參數(shù)資料
| 型號： | IRH7250SE |
| 廠商： | International Rectifier |
| 英文描述： | 200Volt, 0.10Ω, MEGA RAD HARD HEXFET TRANSISTOR(200V, 0.10Ω, MEGA抗輻射 HEXFET 晶體管) |
| 中文描述： | 200Volt，0.10Ω，美佳RAD數(shù)據(jù)通信硬的HEXFET晶體管（200V的電壓，0.10Ω，美佳抗輻射的HEXFET晶體管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 147K |
| 代理商： | IRH7250SE |
IRH7250SE Devices
www.irf.com
3
Table 1. Low Dose Rate
Parameter
IRH7250SE
100K Rads (Si)
Min
200
2.0
—
—
—
—
Units
Test Conditions
Max
—
4.5
100
-100
50
0.10
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
= 16A
nA
μA
W
V
SD
—
1.9
V
TC = 25°C, IS = 26A,V
GS
= 0V
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
160
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
160
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
8.0 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
1.0
15
—
—
—
160
—
—
—
20
15
—
—
—
A
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Cu 28
3x 10
5
~43 200
-5
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per note
5 and a V
DS
bias condition equal to 80% of the de-
vice rated voltage per note 6. Post-irradiation limits
of the devices irradiated to 1 x 10
5
Rads (Si) are pre-
sented in Table 1, column 1,IRH7250SE. The values
in Table 1 will be met for either of the two low dose
rate test circuits that are used. Both pre- and post-
irradiation performance are tested and specified us-
ing the same drive circuitry and test conditions in order
to provide a direct comparison. It should be noted that
at a radiation level of 1 x 10
5
Rads (Si) the only pa-
rameter limit change is V
GSTh
minimum .
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec ( See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
characterization is shown in Table 3.
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