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參數(shù)資料
| 型號(hào)： | IRH7250SE |
| 廠商： | International Rectifier |
| 英文描述： | 200Volt, 0.10Ω, MEGA RAD HARD HEXFET TRANSISTOR(200V, 0.10Ω, MEGA抗輻射 HEXFET 晶體管) |
| 中文描述： | 200Volt，0.10Ω，美佳RAD數(shù)據(jù)通信硬的HEXFET晶體管（200V的電壓，0.10Ω，美佳抗輻射的HEXFET晶體管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 147K |
| 代理商： | IRH7250SE |
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
200Volt, 0.10
W
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under
identical
pre- and post-irrradiation
test conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
ID @ VGS = 12V, TC = 100°C
Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ
Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
PD - 91778
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRH7250SE
www.irf.com
1
IRH7250SE
Units
26
16
104
150
1.2
±20
500
26
15
5.9
W
W/°C
V
mJ
A
mJ
V/ns
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10 sec.)
11.5 (typical)
Weight
g
Pre-Irradiation
o
C
A
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRH7250SE
200V
0.10
W
26A
Features:
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
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