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參數(shù)資料
| 型號： | IRH7250 |
| 廠商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| 中文描述： | 重復(fù)性雪崩和DV /受好評的HEXFET晶體管胸苷 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 317K |
| 代理商： | IRH7250 |
IRH7250, IRH8250 Devices
www.irf.com
5
Post-Irradiation
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a.
Gate Stress of V
GSS
Equals 12 Volts During
Radiation
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| IRH7250SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRH7250SE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package |
| IRH7450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH7450SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH7450SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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