參數(shù)資料
型號: IRGMH40F
文件頁數(shù): 5/8頁
文件大?。?/td> 461K
代理商: IRGMH40F
www.irf.com
5
IRGMH40F
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
3.0
3.1
3.2
3.3
3.4
0
10
20
30
40
50
60
T
R , Gate Resistance (
)
A
V = 960V
V = 15V
T = 25
°
C
I = 13A
0
500
1000
1500
2000
2500
1
10
100
C
V , Collector-to-Emitter Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
10
20
30
40
50
60
G
V
Q , Total Gate Charge (nC)
A
V = 400V
I = 13A
0.1
1
10
100
-60
-40
-20
T , Case Temperature (
°
C)
0
20
40
60
80
100
120
140
160
T
A
R = 10
V = 15V
V = 960V
CC
I = 13A
I = 6.5A
I = 26A
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