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參數(shù)資料
| 型號： | IRGMIC50U |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 318K |
| 代理商： | IRGMIC50U |
IRGMIC50U
INSULATED GATE BIPOLAR TRANSISTOR
WITH ON-BOARD REVERSE DIODE
Features
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Ultra Fast operation 10 kHz
Switching-loss rating includes all "tail" losses
V
CES
= 600V
V
CE(on) max
= 3.0V
@V
GE
= 15V, I
C
= 27A
Parameter
Max.
600
45*
27
220
180
±20
200
80
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
A
V
W
-55 to + 150
°C
300 (0.063in./1.6mm from case for 10s)
10.5 (typical)
g
Absolute Maximum Ratings
02/20/02
www.irf.com
1
Ultra Fast Speed IGBT
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
TO-259AA
Thermal Resistance
Parameter
RthJC
Junction-to-Case-IGBT
RthJC
Junction-to-Case-Diode
RthCS
Case-to-Sink
RthJA
Junction-to-Ambient
For footnotes refer to the last page
Min Typ Max
—
—
—
—
—
0.21
—
—
Units
Test Conditions
0.625
1.0
—
30
°C/W
PD -90813A
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (f
Ic/2
, or the "half-current frequency "),
as well as an indication of the current handling capability
of the device.
Description
*Current is limited by pin diameter
E
G
n-channel
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGMIC50UD | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMIC50UU | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMVC50UD | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
| IRGMVC50UU | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
| IRGNI0025M12 | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 25A I(C) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGMIC50UD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMIC50UU | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMVC50U | 制造商:International Rectifier 功能描述: |
| IRGMVC50UD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
| IRGMVC50UU | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
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