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參數(shù)資料
| 型號(hào)： | IRGMIC50U |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 318K |
| 代理商： | IRGMIC50U |
2
www.irf.com
IRGMIC50U
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Total Inductance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.12
–––
1.6
–––
1.7
–––
24
–––
27
–––
180
–––
130
–––
2.7
–––
6.8
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
C
+L
E
140
35
70
50
75
300
210
–––
–––
2.8
–––
–––
–––
–––
–––
–––
I
C
= 27A
V
CC
= 300V
V
GE
= 15V
I
C
= 27A, V
CC
= 480V
V
GE
= 15V, R
G
= 2.35
Energy losses include "tail"
See Fig. 9, 10, 13
nC
See Fig. 8
T
J
= 125
°
C
C
= 27A, V
CC
= 480V
V
GE
= 15V, R
G
= 2.35
Energy losses include "tail"
See Fig. 11, 13
Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
di/dt = 200A/μS,
I
F
= 27A
VR
≤
200V
di/dt = 200A/μS,
I
F
= 27A
T
J
= 125
°
C, VR
≤
200V
nH
C
ies
C
oes
C
res
T
rr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Peak Reverse Recovery
Time
Diode Peak Reverse Recovery
Charge
–––
2900
–––
–––
330
–––
41
–––
–––
–––
–––
100
pF
Q
rr
–––
–––
375
Parameter
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
–––
–––
0.6
–––
–––
–––
–––
–––
–––
3.0
–––
–––
-13
16
–––
–––
–––
–––
–––
–––
–––
±100
–––
–––
–––
–––
Conditions
V
(BR)CES
–––
–––
3.0
3.25
2.85
5.5
–––
–––
250
5000
V
V
GE
= 0V, I
C
= 1.0 mA
V
GE
= 0V, I
C
= 1.0 mA
I
C
= 27A V
GE
= 15V
I
C
= 45A See Fig. 5
I
C
= 27A , T
J
= 125
°
C
V
CE
= V
GE
, I
C
= 250 μA
mV/
°
C V
CE
= V
GE
, I
C
= 250 μA
S
V
CE
=
100V, I
C
= 27A
V
GE
= 0V, V
CE
= 480V
V
GE
= 0V, V
CE
= 480V, T
J
= 125
°
C
V
GE =
±20
I
C
= 27A
I
C
= 27A , T
J
= 125
°
C
V/
°
C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
V
FM
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
1.7
1.5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
V
ns
ns
mJ
For footnotes refer to the last page
Note: Corresponding Spice and Saber models are available on the Website.
V
ns
nC
mJ
nA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGMIC50UD | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMIC50UU | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMVC50UD | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
| IRGMVC50UU | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
| IRGNI0025M12 | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 25A I(C) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGMIC50UD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMIC50UU | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMVC50U | 制造商:International Rectifier 功能描述: |
| IRGMVC50UD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
| IRGMVC50UU | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
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