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參數(shù)資料
| 型號： | IRGMH40F |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 461K |
| 代理商： | IRGMH40F |
IRGMH40F
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
V
CES
= 1200V
V
CE(on) max
= 3.6V
@V
GE
= 15V, I
C
= 13A
Parameter
Max.
1200
13
48
24
48
± 20
96
36
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
A
V
W
-55 to + 150
°C
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
g
Absolute Maximum Ratings
02/20/02
www.irf.com
1
Fast Speed IGBT
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
TO-254AA
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
1.3
—
48
°C/W
PD -91418B
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (f
Ic/2
, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
Description
For footnotes refer to the last page
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGMIC50U | |
| IRGMIC50UD | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMIC50UU | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMVC50UD | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
| IRGMVC50UU | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGMIC50U | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Ultra Fast Speed IGBT |
| IRGMIC50UD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMIC50UU | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMVC50U | 制造商:International Rectifier 功能描述: |
| IRGMVC50UD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
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