參數資料
型號: IRGB8B60K
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR
中文描述: 絕緣柵雙極晶體管
文件頁數: 9/13頁
文件大?。?/td> 468K
代理商: IRGB8B60K
IRGB/S/SL8B60K
www.irf.com
9
Fig. WF1- Typ. Turn-off Loss Waveform
@ T
J
= 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ T
J
= 150°C using Fig. CT.4
-200
-100
0
100
200
300
400
500
600
0
0.2
0.4
0.6
0.8
1
Time (uS)
V
-4
-2
0
2
4
6
8
10
12
I
tf
Eoff Loss
90% Ice
5% Vce
5% Ice
Vce
Ice
-100
0
100
200
300
400
500
600
0.3
0.5
0.7
0.9
Time (uS)
V
-4
0
4
8
12
16
20
24
I
Eon
Loss
tr
90% Ice
10% Ice
5% Vce
Vce
Ice
Fig. WF3- Typ. S.C Waveform
@ T
C
= 150°C using Fig. CT.3
0
50
100
150
200
250
300
350
400
0.00
10.00
20.00
30.00
40.00
50.00
Time (uS)
V
0
20
40
60
80
I
相關PDF資料
PDF描述
IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR
IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20K Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 4700uF; Voltage: 400V; Case Size: 76.2x110 mm; Packaging: Bulk
IRGBC20MD2-S Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 100uF; Voltage: 450V; Case Size: 22x30 mm; Packaging: Bulk
IRGBC20 Aluminum Screw Terminal Capacitor; Capacitance: 10000uF; Voltage: 450V; Case Size: 90x190 mm; Packaging: Bulk
相關代理商/技術參數
參數描述
IRGB8B60KPBF 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGBC20 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
IRGBC20F 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
IRGBC20FD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:IRGBC20FD2
IRGBC20K 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours