參數(shù)資料
型號: IRGB8B60K
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR
中文描述: 絕緣柵雙極晶體管
文件頁數(shù): 5/13頁
文件大小: 468K
代理商: IRGB8B60K
IRGB/S/SL8B60K
www.irf.com
5
Fig. 11
- Typ. Transfer Characteristics
V
CE
= 360V; tp = 10μs
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 150°C
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 4.0A
ICE = 8.0A
ICE = 16A
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 25°C
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 4.0A
ICE = 8.0A
ICE = 16A
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= -40°C
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 4.0A
ICE = 8.0A
ICE = 16A
0
5
10
15
20
VGE (V)
0
20
40
60
80
100
IC
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
相關(guān)PDF資料
PDF描述
IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR
IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20K Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 4700uF; Voltage: 400V; Case Size: 76.2x110 mm; Packaging: Bulk
IRGBC20MD2-S Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 100uF; Voltage: 450V; Case Size: 22x30 mm; Packaging: Bulk
IRGBC20 Aluminum Screw Terminal Capacitor; Capacitance: 10000uF; Voltage: 450V; Case Size: 90x190 mm; Packaging: Bulk
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGB8B60KPBF 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGBC20 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
IRGBC20F 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
IRGBC20FD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:IRGBC20FD2
IRGBC20K 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours