參數(shù)資料
型號(hào)： IRG4BC40SPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
中文描述： 絕緣柵雙極晶體管IGBT的標(biāo)準(zhǔn)速度
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 590K
代理商： IRG4BC40SPBF
IRG4BC40SPbF
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
100
—
14
—
34
—
22
—
18
—
650
—
380
—
0.45
—
6.5
—
6.95
—
23
—
21
—
1000
—
940
—
12
—
7.5
—
2200
—
140
—
26
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
150
21
51
—
—
980
570
—
—
9.9
—
—
—
—
—
—
—
—
—
I
C
= 31A
V
CC
= 400V
V
GE
= 15V
nC
See Fig. 8
T
J
= 25°C
I
C
= 31A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
See Fig. 10, 11, 13, 14
mJ
T
J
= 150°C,
I
C
= 31A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
mJ
nH
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
—
18
—
—
0.75
—
1.32
—
1.68
—
1.32
3.0
—
—
-9.3
12
21
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
1.5
—
—
6.0
—
—
250
2.0
1000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 31A V
GE
= 15V
I
C
= 60A
I
C
= 31A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
=
100V, I
C
= 31A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
g
fe
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 10
,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
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參數(shù)描述
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IRG4BC40UPBF 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BC40W 功能描述:IGBT WARP 600V 40A TO-220AB RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
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