參數(shù)資料
型號： IRG4BC30S-SPBF
廠商： International Rectifier
英文描述： LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 2280; Supply Voltage: 1.2V; I/Os: 271; Grade: -3; Package: Lead-Free ftBGA; Pins: 324; Temp.: AUTO
中文描述： 絕緣柵雙極晶體管IGBT的標(biāo)準(zhǔn)速度
文件頁數(shù)： 2/10頁
文件大?。?/td> 215K
代理商： IRG4BC30S-SPBF
2
www.irf.com
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature (See fig. 13b).
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 23
,
(See fig. 13a).
Repetitive rating; pulse width limited by maximum
junction temperature.
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max.
600
—
18
—
—
0.75
—
1.40
—
1.84
—
1.45
3.0
—
—
-11
6.0
11
—
—
—
—
—
—
—
—
Units
V
V
V/°C
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
1.6
—
—
6.0
—
—
250
2.0
1000
±100
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 18A V
GE
= 15V
I
C
= 34A
I
C
= 18A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 18A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
nA
V
GE
= ±20V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig. 2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
A
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
—
50
—
7.3
—
17
—
22
—
18
—
540
—
390
—
0.26
—
3.45
—
3.71
—
21
—
19
—
790
—
760
—
6.55
—
7.5
—
1100
—
72
—
13
Units
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
75
11
26
—
—
810
590
—
—
5.6
—
—
—
—
—
—
—
—
—
I
C
= 18A
V
CC
= 400V
V
GE
= 15V
nC
See Fig. 8
T
J
= 25°C
I
C
= 18A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
See Fig. 9, 10, 14
mJ
T
J
= 150°C,
I
C
= 18A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
mJ
nH
pF
See Fig. 7
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4BC30S-STRL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB
IRG4BC30S-STRLP 功能描述:IGBT 模塊 600V DC-1 KHZ (STD) DISCRETE IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
IRG4BC30S-STRR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB
IRG4BC30U 功能描述:IGBT UFAST 600V 23A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRG4BC30UD 制造商:International Rectifier 功能描述:IGBT TO-220
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