參數(shù)資料
型號(hào)： IRG4BC30FD-SPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
中文描述： 絕緣柵雙極型晶體管，二極管HYPERFAST
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 1182K
代理商： IRG4BC30FD-SPBF
IRG4BC30FD-SPbF
2
www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
3.0
—
6.1
—
—
—
—
—
Typ. Max. Units
—
—
0.69
—
1.59
1.8
1.99
—
1.7
—
—
6.0
-11
—
10
—
—
250
—
2500
1.4
1.7
1.3
1.6
—
±100
V
V
GE
= 0V, I
C
= 250μA
V/°C V
GE
= 0V, I
C
= 1mA
I
C
= 17A
V
I
C
= 31A
I
C
= 17A, T
J
= 150°C
V
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 17A
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
I
F
= 12A
I
F
= 12A, T
J
= 150°C
nA
V
GE
= ±20V
V
GE
= 15V
See Fig. 2, 5
V
CE(on)
Collector-to-Emitter Voltage
V
GE(th)
V
GE(th)
/
T
J
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Gate-to-Emitter Leakage Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
51
77
7.9
12
19
28
42
—
26
—
230
350
160
230
0.63
—
1.39
—
2.02
3.9
42
—
27
—
310
—
310
—
3.2
—
7.5
—
1100
—
74
—
14
—
42
60
80
120
3.5
6.0
5.6
10
80
180
220
600
180
—
120
—
I
C
= 17A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
ns
I
C
= 17A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses inlcude "tail" and
diode reverse recovery.
mJ See Fig. 9, 10, 11, 18
nC
See Fig. 8
T
J
= 150°C See Fig. 9,10,11,18
ns
I
C
= 17A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses inlcude "tail" and
mJ diode reverse recovery.
nH
Measured 5mm from package
V
GE
= 0V
pF
V
CC
= 30V
f = 1.0MHz
ns
T
J
= 25°C See Fig.
T
J
= 125°C
A
T
J
= 25°C See Fig.
T
J
= 125°C
nC
T
J
= 25°C See Fig.
T
J
= 125°C
A/μs T
J
= 25°C See Fig.
T
J
= 125°C
See Fig. 7
14
I
rr
Diode Peak Reverse Recovery Current
15
Q
rr
Diode Reverse Recovery Charge
16
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
—
—
17
V
R
= 200V
di/dt 200A/μs
Conditions
Conditions
I
F
= 12A
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