參數(shù)資料
型號： IRG4BC10SDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/10頁
文件大?。?/td> 278K
代理商： IRG4BC10SDPBF
IRG4BC10SDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
2
www.irf.com
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
—
0.64
—
1.58
—
2.05
—
1.68
3.0
—
—
-9.5
3.65 5.48
—
—
—
—
1000
—
1.5
—
1.4
—
—
±100
Conditions
—
—
1.7
—
—
6.0
—
—
250
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 8.0A
I
C
= 14.0A
I
C
= 8.0A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
=8.0A
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
I
C
=4.0A
I
C
=4.0A, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
1.8
1.7
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Details of note
through
are on the last page
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
2.42
6.53
76
32
815 1200
720 1080
0.31
3.28
3.60 10.9
1.46
70
36
890
890
3.83
7.5
280
30
4.0
28
38
2.9
3.7
40
70
280
235
22
3.6
9.8
—
—
I
C
= 8.0A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 8.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
nC
See Fig. 8
ns
—
—
mJ
2.6
—
—
—
—
—
—
—
—
—
42
57
5.2
6.7
60
105
—
—
mJ
I
C
= 5.0A
T
J
= 150°C, See Fig. 10,11, 18
I
C
= 8.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
=4.0A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Parameter
Min.
Typ.
Max.
Units
Conditions
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