參數(shù)資料
型號(hào)： IRFZ44ZSPBF
廠商： International Rectifier
英文描述： HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mヘ , ID = 51A )
中文描述： ㈢的HEXFET功率MOSFET（減振鋼板基本\u003d 55V的，的RDS（on）\u003d十三點(diǎn)九米ヘ，身份證\u003d 51A條）
文件頁(yè)數(shù)： 7/13頁(yè)
文件大小： 295K
代理商： IRFZ44ZSPBF
www.irf.com
7
Fig 15.
Typical Avalanche Current vs.Pulsewidth
Fig 16.
Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
A
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses
tav
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
EA
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 31A
相關(guān)PDF資料
PDF描述
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