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參數(shù)資料
| 型號(hào)： | IRFZ44ZSPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mヘ , ID = 51A ) |
| 中文描述： | ㈢的HEXFET功率MOSFET（減振鋼板基本\u003d 55V的，的RDS（on）\u003d十三點(diǎn)九米ヘ，身份證\u003d 51A條） |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | IRFZ44ZSPBF |
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www.irf.com
1
HEXFET
is a registered trademark of International Rectifier.
IRFZ44ZPbF
IRFZ44ZSPbF
IRFZ44ZLPbF
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 13.9m
I
D
= 51A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
O
O
O
O
O
O
O
AUTOMOTIVE MOSFET
PD - 95379
Description
Specifically designed for Automotive applica-
tions, this HEXFET
Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
D
2
Pak
IRFZ44ZS
TO-220AB
IRFZ44Z
TO-262
IRFZ44ZL
Absolute Maximum Ratings
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Max.
51
36
200
80
10 lbfin (1.1Nm)
0.53
± 20
86
105
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFZ46NL | Male Disconnect Solderless Terminal; Wire Size (AWG):16-14; Tab Width:0.187"; Insulator Color:Blue RoHS Compliant: Yes |
| IRFZ46NS | HEXFET POWER MOSFET |
| IRFZ46NSTRR | HEXFET POWER MOSFET |
| IRFZ46 | RES 5.1K-OHM 5% 0.25W 200PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA |
| IRFZ46N | Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFZ44ZSTRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 51A 3PIN D2PAK - Tape and Reel |
| IRFZ44ZSTRRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 51A 3PIN D2PAK - Tape and Reel |
| IRFZ44ZSTRRPBF | 功能描述:MOSFET MOSFT 55V 51A 13.9mOhm 29nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ45 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| IRFZ46 | 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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