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1/17/05
IRFR24N15DPbF
IRFU24N15DPbF
SMPS MOSFET
HEXFET Power MOSFET
R
DS(on)
max
95m
Absolute Maximum Ratings
Notes
through are on page 10
High frequency DC-DC converters
Lead-Free
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
V
DSS
150V
I
D
24A
D-Pak
IRFR24N15D
I-Pak
IRFU24N15D
Parameter
Max.
24
17
96
140
0.92
± 30
4.9
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Parameter
Typ.
–––
–––
–––
Max.
1.1
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
Thermal Resistance