參數(shù)資料
型號(hào)： IRFU2905ZPBF
廠商： International Rectifier
元件分類： 功率晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 30V的N溝道的PowerTrench MOSFET的
文件頁(yè)數(shù)： 1/12頁(yè)
文件大小： 282K
代理商： IRFU2905ZPBF
IRFR2905ZPbF
IRFU2905ZPbF
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 14.5m
I
D
= 42A
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 95943A
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
Absolute Maximum Ratings
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
D-Pak
IRFR2905Z
I-Pak
IRFU2905Z
HEXFET
is a registered trademark of International Rectifier.
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
Pulsed Drain Current
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
–––
–––
–––
Max.
1.38
40
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
82
55
See Fig.12a, 12b, 15, 16
110
0.72
± 20
Max.
59
42
42
240
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
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