參數(shù)資料
型號(hào): IRFU12N25DPBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A )
中文描述: HEXFET功率MOSFET(減振鋼板基本\u003d 250V時(shí),RDS(on)的最大值\u003d 0.26ヘ,身份證\u003d 14A條)
文件頁(yè)數(shù): 10/11頁(yè)
文件大?。?/td> 235K
代理商: IRFU12N25DPBF
10
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
8.4A, di/dt
150A/μs, V
DD
V
(BR)DSS
,
T
J
175°C
*
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Starting T
J
= 25°C, L = 7.1mH
R
G
= 25
, I
AS
= 8.4A.
Pulse width
300μs; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
12/04
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
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