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參數(shù)資料
| 型號： | IRFU2405 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.016ohm，身份證\u003d 56A條） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 129K |
| 代理商： | IRFU2405 |
IRFR2405
IRFU2405
HEXFET
Power MOSFET
Seventh Generation HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
S
D
G
Parameter
Max.
56
40
220
110
0.71
± 20
130
34
11
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
V
DSS
= 55V
R
DS(on)
= 0.016
I
D
= 56A
Description
3/1/00
www.irf.com
1
l
Surface Mount (IRFR2405)
l
Straight Lead (IRFU2405)
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
PD - 93861
D-Pak I-Pak
IRFR2405 IRFU2405
Parameter
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
Thermal Resistance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFR2405 | Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A) |
| IRFU2407 | Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A) |
| IRFR2407 | Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A) |
| IRFU3708 | HEXFET Power MOSFET for High Frequency DC-DC Isolated Converters(用于高頻DC-DC隔離轉(zhuǎn)換器的N溝道HEXFET功率MOS場效應(yīng)管) |
| IRFR3708 | Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFU2405PBF | 功能描述:MOSFET MOSFT 55V 56A 16mOhm 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU2407 | 功能描述:MOSFET N-CH 75V 42A I-PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFU2407PBF | 制造商:International Rectifier 功能描述:MOSFET N 75V 42A I-PAK |
| IRFU24N15D | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS MOSFET |
| IRFU24N15DPBF | 制造商:International Rectifier 功能描述:MOSFET N 150V 24A I-PAK |
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