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參數(shù)資料
| 型號： | IRFS640A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power MOSFET（200V，0.18Ω，9.8A）(N溝道功率MOS場效應(yīng)管（漏源電壓200V，導(dǎo)通電阻0.18Ω，漏電流9.8）) |
| 中文描述： | 9.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 264K |
| 代理商： | IRFS640A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
DS
= 200V
Lower R
DS(ON)
: 0.144 (Typ. )
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
θ
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
)
)
)
Characteristic
Value
200
9.8
6.2
72
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
IRFS640A
BV
DSS
= 200 V
R
DS(on)
= 0.18
I
D
= 9.8 A
256
9.8
4.3
5.0
43
0.35
- 55 to +150
300
2.89
62.5
--
--
30
O
1
O
O
1
O
1
2
O
3
o
C
o
C
o
C
o
C
θ
o
C/W
1999 Fairchild Semiconductor Corporation
Rev. B
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PDF描述 |
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| IRFS710A | N-Channel Power MOSFET（400V，3.6Ω，1.6A）(N溝道功率MOS場效應(yīng)管（漏源電壓400V，導(dǎo)通電阻3.6Ω，漏電流1.6A）) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS640B | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFS640B_FP001 | 功能描述:MOSFET TO-220 ISO N-CH 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS640BT_FP001 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS641 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Improved inductive ruggedness |
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