- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378638 > IRFS620A (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Power MOSFET（200V，0.8Ω，4.1A）(N溝道功率MOS場效應(yīng)管（漏源電壓200V，導(dǎo)通電阻0.8Ω，漏電流4.1A）) PDF資料下載
參數(shù)資料
| 型號： | IRFS620A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power MOSFET（200V，0.8Ω，4.1A）(N溝道功率MOS場效應(yīng)管（漏源電壓200V，導(dǎo)通電阻0.8Ω，漏電流4.1A）) |
| 中文描述： | 4.1 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 259K |
| 代理商： | IRFS620A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
DS
= 200V
Low R
DS(ON)
: 0.626 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
θ
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 )
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
)
)
Characteristic
Value
200
4.1
2.6
18
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
30
78
4.1
3.2
5.0
32
0.25
+
_
O
1
O
O
1
O
1
2
O
3
C
o
C
o
C
o
C
θ
o
C/W
IRFS620A
BV
DSS
= 200 V
R
DS(on)
= 0.8
I
D
= 4.1 A
- 55 to +150
300
3.95
62.5
--
--
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFS640 | 200V N-Channel MOSFET |
| IRFS640B | 200V N-Channel MOSFET |
| IRFS650A | Advanced Power MOSFET |
| IRFS650B | 200V N-Channel MOSFET |
| IRFS654 | TERMINAL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS620B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| IRFS620B_FP001 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS621 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | SOT-186 |
| IRFS624 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.3A I(D) | TO-220VAR |
| IRFS624A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.4A I(D) | TO-220AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。