參數(shù)資料
型號(hào): IRFS654
廠商: Fairchild Semiconductor Corporation
元件分類: 其它接口
英文描述: TERMINAL
中文描述: IGBT模塊
文件頁(yè)數(shù): 1/10頁(yè)
文件大小: 867K
代理商: IRFS654
2001 Fairchild Semiconductor Corporation
November 2001
Rev. A, November 2001
I
IRF654B/IRFS654B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
21A, 250V, R
DS(on)
= 0.14
@V
GS
= 10 V
Low gate charge ( typical 95 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRF654B
IRFS654B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
250
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
21
13.3
84
21 *
13.3 *
84 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
700
21
15.6
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
156
1.25
50
0.4
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
IRF654B
0.8
0.5
62.5
IRFS654B
2.5
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D
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