參數(shù)資料
型號(hào)： IRFS640
廠商： Fairchild Semiconductor Corporation
英文描述： 200V N-Channel MOSFET
中文描述： 200伏N溝道MOSFET
文件頁數(shù)： 1/10頁
文件大小： 916K
代理商： IRFS640
2001 Fairchild Semiconductor Corporation
November 2001
Rev. A, November 2001
I
IRF640B/IRFS640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
18A, 200V, R
DS(on)
= 0.18
@V
GS
= 10 V
Low gate charge ( typical 45 nC)
Low Crss ( typical 45 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRF640B
IRFS640B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
200
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
18
11.4
72
18 *
11.4 *
72 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
250
18
13.9
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
139
1.11
43
0.35
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
IRF640B
0.9
0.5
62.5
IRFS640B
2.89
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D
相關(guān)PDF資料
PDF描述
IRFS640B 200V N-Channel MOSFET
IRFS650A Advanced Power MOSFET
IRFS650B 200V N-Channel MOSFET
IRFS654 TERMINAL
IRF654 TUBING TEFLON .015 ID 100' CLR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFS640A 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFS640B 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFS640B_FP001 功能描述:MOSFET TO-220 ISO N-CH 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS640BT_FP001 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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