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參數(shù)資料
| 型號： | IRFS520A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 7.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 251K |
| 代理商： | IRFS520A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
Operating Temperature
Lower Leakage Current : 10
Lower R
DS(ON)
: 0.155
A (Max.) @ V
DS
= 100V
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
R
JC
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
O
1
)
Characteristic
Value
100
7.2
5.1
37
2
0
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
μ
O
O
1
O
1
2
O
3
Ο
C
Ο
C
Ο
C
Ο
C
θ
θ
Ο
C
Ο
C
Ο
C
IRFS520A
BV
DSS
= 100 V
R
DS(on)
= 0.2
I
D
= 7.2 A
104
7.2
2.8
6.5
28
0.19
- 55 to +175
300
5.4
62.5
--
--
1999 Fairchild Semiconductor Corporation
Rev. B
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