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參數(shù)資料
| 型號： | IRFR410 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs(1.5A, 500V, 7.000 Ω N溝道MOSFET) |
| 中文描述： | 1.5 A, 500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | IRFR410 |
4-403
Internal Drain Inductance
L
D
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From Header
to Source Bonding Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
-
-
3.0
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
Free Air Operation
-
-
110
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
1.5
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
3.0
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 1.5A, V
GS
= 0V, (Figure 11)
T
J
= 25
o
C, I
SD
= 1.5A, dI
SD
/dt = 100A/
μ
s
-
-
2.0
V
Reverse Recovery Time
t
rr
130
-
520
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3)
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 40
μ
H, R
G
= 25
, peak I
AS
= 1.5A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
IRFR410, IRFU410
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