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參數(shù)資料
| 型號(hào)： | IRFR410 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs(1.5A, 500V, 7.000 Ω N溝道MOSFET) |
| 中文描述： | 1.5 A, 500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 55K |
| 代理商： | IRFR410 |
4-401
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFR410, IRFU410
1.5A, 500V 7.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17445.
Features
1.5A, 500V
r
DS(ON)
= 7.000
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
High Input Impedance
150
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFU410
TO-251AA
IFU410
IRFR410
TO-252AA
IFR410
NOTE:
When ordering, use the entire part number.
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
GATE
SOURCE
DRAIN
DRAIN (FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3372.2
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