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參數(shù)資料
| 型號： | IRFP460ASPBF |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SMD-247, 3 PIN |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 115K |
| 代理商： | IRFP460ASPBF |
IRFP460AS
8
www.irf.com
SMD-247 Part Marking Information
SMD-247 Package Outline
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD ≤ 20A, di/dt ≤ 125A/s, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 4.3mH
RG = 25, IAS = 20A. (See Figure 12)
Pulse width ≤ 300s; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
2X R
A
0.25 [.010]
D B
0.25 [.010]
D C A
C
B
D
12
3
4
2.65 [.104]
2.15 [.085]
0.20 [.225] D
2X
0.25 [.010]
DB
0.95 [.037]
0.35 [.014]
2X
1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994.
4. T O-247 S MD IS A MODIF IE D T O-247AC.
3. DIMENS IONS AR E SHOWN IN MILLIMET E RS [INCHE S].
2. CONT ROLLING DIMENSION: MILLIMET ER .
NOT E S:
3 - SOURCE
4 - DRAIN
MOSF ET
1 - GAT E
2 - DRAIN
3 - EMIT T ER
4 - COLLECT OR
2 - COLLECT OR
1 - GAT E
IGBT
LEAD AS SIGNMENT S
3.0 [.118]
MAX.
2.75 [.108]
2.25 [.089]
3.65 [.143]
3.55 [.140]
2X
5.45 [.215]
1.40 [.055]
1.00 [.040]
20.30 [.799]
19.70 [.776]
5.65 [.222]
4.65 [.183]
5.50 [.217]
0.80 [.031]
0.40 [.016]
4
2.50 [.099]
1.50 [.060]
5.30 [.208]
4.70 [.186]
13.70 [.539]
13.50 [.532]
16.20 [.637]
16.00 [.630]
15.90 [.625]
15.30 [.603]
5.70 [.224]
5.30 [.209]
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
PART NUMBER
ASSEMBLY LOT CODE 3A1Q
T HIS IS AN IRF P450S WITH
EXAMPLE:
LOT CODE
ASSEMBLY
3A1Q 9906
INTERNAT IONAL
IRFP450S
RECT IF IER
LOGO
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP460B | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:D Series Power MOSFET |
| IRFP460BPBF | 功能描述:MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460C | 功能描述:MOSFET 500V N-Channel C-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460LC | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460LCPBF | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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