參數(shù)資料
型號： IRFP460ASPBF
廠商： VISHAY INTERTECHNOLOGY INC
元件分類： JFETs
英文描述： 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SMD-247, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 115K
代理商： IRFP460ASPBF
IRFP460AS
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
11
–––
SVDS = 50V, ID = 12A
Qg
Total Gate Charge
–––
105
ID = 20A
Qgs
Gate-to-Source Charge
–––
26
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
42
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
18
–––
VDD = 250V
tr
Rise Time
–––
55
–––
ID = 20A
td(off)
Turn-Off Delay Time
–––
45
–––
RG = 4.3
tf
Fall Time
–––
39
–––
RD = 13, See Fig. 10
Ciss
Input Capacitance
–––
3100 –––
VGS = 0V
Coss
Output Capacitance
–––
480
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
18
–––
pF
= 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
4430 –––
VGS = 0V, VDS = 1.0V, = 1.0MHz
Coss
Output Capacitance
–––
130
–––
VGS = 0V, VDS = 400V, = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
140
–––
VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
–––
960
mJ
IAR
Avalanche Current
–––
20
A
EAR
Repetitive Avalanche Energy
–––
28
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
1.8
V
TJ = 25°C, IS = 20A, VGS = 0V
trr
Reverse Recovery Time
–––
480
710
ns
TJ = 25°C, IF = 20A
Qrr
Reverse RecoveryCharge
–––
5.0
7.5
C
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
20
80
A
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.45
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
VVGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.61
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.27
VGS = 10V, ID = 12A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250A
–––
25
A
VDS = 500V, VGS = 0V
–––
250
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
-100
nA
VGS = -30V
IGSS
IDSS
Drain-to-Source Leakage Current
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參數(shù)描述
IRFP460B 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:D Series Power MOSFET
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IRFP460LC 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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