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    參數(shù)資料
    

    


    


    
型號(hào)：
IRFP460ASPBF

    

    
廠商：
VISHAY INTERTECHNOLOGY INC

    

    
元件分類：
JFETs

    

    
英文描述：
20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET

    

    
封裝：
SMD-247, 3 PIN

    

    
文件頁(yè)數(shù)：
2/8頁(yè)

    

    
文件大?。?/td>
115K

    

    
代理商：
IRFP460ASPBF


    

    

    

	
    
    
    

    
    
	
    IRFP460AS
    2
    www.irf.com
    Parameter
    Min. Typ. Max. Units
    Conditions
    gfs
    Forward Transconductance
    11
    –––
    SVDS = 50V, ID = 12A
    Qg
    Total Gate Charge
    –––
    105
    ID = 20A
    Qgs
    Gate-to-Source Charge
    –––
    26
    nC
    VDS = 400V
    Qgd
    Gate-to-Drain ("Miller") Charge
    –––
    42
    VGS = 10V, See Fig. 6 and 13
    td(on)
    Turn-On Delay Time
    –––
    18
    –––
    VDD = 250V
    tr
    Rise Time
    –––
    55
    –––
    ID = 20A
    td(off)
    Turn-Off Delay Time
    –––
    45
    –––
    RG = 4.3
    tf
    Fall Time
    –––
    39
    –––
    RD = 13, See Fig. 10
    Ciss
    Input Capacitance
    –––
    3100 –––
    VGS = 0V
    Coss
    Output Capacitance
    –––
    480
    –––
    VDS = 25V
    Crss
    Reverse Transfer Capacitance
    –––
    18
    –––
    pF
     = 1.0MHz, See Fig. 5
    Coss
    Output Capacitance
    –––
    4430 –––
    VGS = 0V, VDS = 1.0V,  = 1.0MHz
    Coss
    Output Capacitance
    –––
    130
    –––
    VGS = 0V, VDS = 400V,  = 1.0MHz
    Coss eff.
    Effective Output Capacitance
    –––
    140
    –––
    VGS = 0V, VDS = 0V to 400V
    Dynamic @ TJ = 25°C (unless otherwise specified)
    ns
    Parameter
    Typ.
    Max.
    Units
    EAS
    Single Pulse Avalanche Energy
    –––
    960
    mJ
    IAR
    Avalanche Current
    –––
    20
    A
    EAR
    Repetitive Avalanche Energy
    –––
    28
    mJ
    Avalanche Characteristics
    S
    D
    G
    Parameter
    Min. Typ. Max. Units
    Conditions
    IS
    Continuous Source Current
    MOSFET symbol
    (Body Diode)
    –––
    showing the
    ISM
    Pulsed Source Current
    integral reverse
    (Body Diode)
    –––
    p-n junction diode.
    VSD
    Diode Forward Voltage
    –––
    1.8
    V
    TJ = 25°C, IS = 20A, VGS = 0V
    trr
    Reverse Recovery Time
    –––
    480
    710
    ns
    TJ = 25°C, IF = 20A
    Qrr
    Reverse RecoveryCharge
    –––
    5.0
    7.5
    C
    di/dt = 100A/s
    ton
    Forward Turn-On Time
    Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
    Diode Characteristics
    20
    80
    A
    Parameter
    Typ.
    Max.
    Units
    RθJC
    Junction-to-Case
    –––
    0.45
    RθCS
    Case-to-Sink, Flat, Greased Surface
    0.24
    –––
    °C/W
    RθJA
    Junction-to-Ambient
    –––
    40
    Thermal Resistance
    Static @ TJ = 25°C (unless otherwise specified)
    Parameter
    Min. Typ. Max. Units
    Conditions
    V(BR)DSS
    Drain-to-Source Breakdown Voltage
    500
    –––
    VVGS = 0V, ID = 250A
    V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
    –––
    0.61
    –––
    V/°C
    Reference to 25°C, ID = 1mA
    RDS(on)
    Static Drain-to-Source On-Resistance
    –––
    0.27
    VGS = 10V, ID = 12A
    VGS(th)
    Gate Threshold Voltage
    2.0
    –––
    4.0
    V
    VDS = VGS, ID = 250A
    –––
    25
    A
    VDS = 500V, VGS = 0V
    –––
    250
    VDS = 400V, VGS = 0V, TJ = 125°C
    Gate-to-Source Forward Leakage
    –––
    100
    VGS = 30V
    Gate-to-Source Reverse Leakage
    –––
    -100
    nA
    VGS = -30V
    IGSS
    IDSS
    Drain-to-Source Leakage Current
    
    
    
    
    
    


    


    

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IRFP460B
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IRFP460LC
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IRFP460LCPBF
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