參數(shù)資料
型號(hào): IRFP440
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET(8.8A, 500V, 0.850 Ω, N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述: 8.8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù): 4/7頁
文件大小: 56K
代理商: IRFP440
4-350
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
1
10
10
2
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
10
2
1
10
μ
s
100
μ
s
1ms
10ms
DC
T
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
OPERATION IN THIS
REGION IS LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
100
150
200
0
250
15
12
9
0
6
I
D
,
V
GS
= 6.0V
V
GS
= 5.5V
V
GS
= 5.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
3
V
GS
= 10V
V
GS
= 4.0V
V
GS
= 4.5V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3
6
9
12
0
15
15
12
9
0
6
I
D
,
3
V
GS
= 10V
V
GS
= 6.0V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 5.5V
V
GS
= 5.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
2
10
1
0
2
4
6
8
10
T
J
= 150
o
C
T
J
= 25
o
C
0.1
10
-2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
32
I
D
, DRAIN CURRENT (A)
8
16
24
0
40
10
8
5
0
4
r
D
V
GS
= 20V
2
V
GS
= 10V
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
3.0
1.8
0.6
80
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
2.4
1.2
0
60
120
O
-20
-40
20
40
100
140
160
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 4.9A, V
GS
= 10V
IRFP440
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IRFP440PBF 功能描述:MOSFET N-Chan 500V 8.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP440R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8.8A I(D) | TO-247