參數(shù)資料
型號： IRFP32N50K
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）典型.\u003d 0.135ohm，身份證\u003d 32A條）
文件頁數(shù)： 2/8頁
文件大?。?/td> 94K
代理商： IRFP32N50K
IRFP32N50K
Static @ T
J
= 25°C (unless otherwise specified)
2
www.irf.com
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
500
–––
–––
0.54
–––
0.135 0.16
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 32A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
V
V/
°
C
V
μA
μA
5.0
50
250
100
-100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T
J
= 25
°
C (unless otherwise specified)
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25
°
C, L = 0.87mH, R
G
= 25
,
I
AS
= 32A,
I
SD
≤
32A, di/dt
≤
197A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
14
–––
–––
–––
190 I
D
= 32A
–––
–––
59
–––
–––
84
–––
28
–––
–––
120
–––
–––
48
–––
–––
54
–––
–––
5280
–––
–––
550
–––
–––
45
–––
–––
5630
–––
–––
155
–––
–––
265
–––
Conditions
V
DS
= 50V, I
D
= 32A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 400V
V
GS
= 10V
V
DD
= 250V
I
D
= 32A
R
G
= 4.3
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 400V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
pF
ns
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 32A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 32A
di/dt = 100A/μs
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
I
RRM
t
on
–––
–––
–––
–––
–––
530
9.0
30
1.5
800
13.5
–––
V
ns
μC
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
Diode Characteristics
32
130
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
相關(guān)PDF資料
PDF描述
IRFP32N50 Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)
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IRFP350 N-CHANNEL POWER MOSFETS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP32N50K_04 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
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